Eklund, P.P.EklundEmmerlich, J.J.EmmerlichHögberg, H.H.HögbergWilhelmsson, O.O.WilhelmssonIsberg, P.P.IsbergBirch, J.J.BirchPersson, P. O. Å.P. O. Å.PerssonJansson, U.U.JanssonHultman, L.L.Hultman2024-11-192024-11-1920050734-211X10.1116/1.2131081https://arbor.bfh.ch/handle/arbor/30427We have synthesized Ti–Si–C nanocomposite thin films by dc magnetron sputtering from a Ti3SiC2 compound target in an Ar discharge on Si(100), Al2O3(0001), and Al substrates at temperatures from room temperature to 300°C. Electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy showed that the films consisted of nanocrystalline (nc-) TiC and amorphous (a-) SiC, with the possible presence of a small amount of noncarbidic C. The growth mode was columnar, yielding a nodular film-surface morphology. Mechanically, the films exhibited a remarkable ductile behavior. Their nanoindentation hardness and E-modulus values were 20 and 290GPa, respectively. The electrical resistivity was 330μΩcm for optimal Ar pressure (4mTorr) and substrate temperature (300°C). The resulting nc-TiC∕a-SiC films performed well as electrical contact material. These films’ electrical-contact resistance against Ag was remarkably low, 6μΩ at a contact force of 800N compared to 3.2μΩ for Ag against Ag. The chemical stability of the nc-TiC∕a-SiC films was excellent, as shown by a Battelle flowing mixed corrosive-gas test, with no N, Cl, or S contaminants entering the bulk of the films.enarticle