Machining of [100], [110] and [111] oriented silicon with ultrashort laser pulses in the NIR
Version
Published
Date Issued
2021
Author(s)
Molpeceres, Carlos
Narazaki, Aiko
Qiao, Jie
Type
Conference Paper
Language
English
Abstract
[100], [110] and [111] oriented silicon shows different behavior when it is machined with 10 ps pulses in the NIR. For the [100] orientation the roughness increases to 2.8 µm when the peak fluence is raised to 1.6 J/cm2 then drops down to a value below 200 nm for a fluence of 2 J/cm2 and stays below 300nm for fluences up to 7.5 J/cm2. For the other orientations a completely different behavior is observed. The roughness constantly increases to 900 nm at 1.6 J/cm2 and then further to about 8 µm for a peak fluence of 7.5 J/cm2.
Subjects
QC Physics
TJ Mechanical engineering and machinery
ISBN
9781510641822
Publisher DOI
Conference
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVI
Publisher
SPIE
Submitter
Neuenschwander, Beat
Citation apa
Neuenschwander, B., Remund, S. M., Wildbolz, C. A., Chaja, M., Molpeceres, C., Narazaki, A., & Qiao, J. (2021). Machining of [100], [110] and [111] oriented silicon with ultrashort laser pulses in the NIR. Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVI. SPIE. https://arbor.bfh.ch/handle/arbor/43449
